Cover substrate attached to a rim substrate with electrically connected through hole

ABSTRACT

A semiconductor package, includes: element substrate having first surface, including: functional element on first surface, and extracting electrode on first surface and configured to output a signal of functional element, extracting electrode being disposed around functional element; rim substrate shaped into a frame, and configured to have first junction with element substrate to surround functional element, rim substrate including: first through hole through rim substrate, and connecting electrode which is: formed by packing first through hole with first conductor material, configured to seal signal extracting aperture of extracting electrode, and configured to electrically connect signal extracting aperture with takeout electrode; and cover substrate configured to have second junction with rim substrate to block aperture of rim substrate, cover substrate including: second through hole through cover substrate, and takeout electrode which is: formed by packing second through hole with second conductor material, and configured to take out signal of functional element.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor package where afunctional element formed on a first surface of an element substrate issealed in a closed space. The present invention also relates to a methodof producing the semiconductor package and a semiconductor packageassembly.

2. Description of the Related Art

A wafer level package is known as a semiconductor package where asemiconductor element formed on a surface of a semiconductor elementsubstrate is sealed in a closed space. In the above wafer level package,a substrate has a junction with a wafer formed with the semiconductorelement, to thereby seal the semiconductor element in the closed space.Japanese Patent Application Laid-Open No 2005-251898 (=JP2005251898)discloses a conventional technology of a method of using solder forcausing the substrate to have the junction with the wafer.

In the conventional wafer level package according to the JP2005251898,however, the solder is applied in such a manner as to surround thesemiconductor element for the junction between the substrate and thewafer. By the way, the solder for the junction between the substrate andthe wafer is made of metal. Therefore, for preventing the solder (forthe above junction) from contacting an electrode pad of thesemiconductor element, the solder and the electrode pad should be spacedapart. Therefore, the wafer level package according to the JP2005251898is large, which is inconvenient.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a semiconductorpackage, a method of producing the same and a semiconductor packageassembly.

According to a first aspect of the present invention, there is provideda semiconductor package, comprising: 1) an element substrate having afirst surface, including: i) a functional element formed on the firstsurface, and ii) an extracting electrode formed on the first surface andconfigured to output a signal of the functional element, the extractingelectrode being disposed around the functional element; 2) a rimsubstrate shaped substantially into a frame, and configured to have afirst junction with the element substrate in such a manner as tosurround the functional element, the rim substrate including: i) a firstthrough hole through the rim substrate, and ii) a connecting electrodewhich is: formed by packing the first through hole with a firstconductor material, configured to seal a signal extracting aperture ofthe extracting electrode, and configured to electrically connect thesignal extracting aperture with a takeout electrode; and 3) a coversubstrate configured to have a second junction with the rim substrate insuch a manner as to block an aperture of the rim substrate, the coversubstrate including: i) a second through hole through the coversubstrate, and ii) the takeout electrode which is: formed by packing thesecond through hole with a second conductor material, and configured totake out the signal of the functional element.

According to a second aspect of the present invention, there is provideda semiconductor package assembly, comprising: 1) a plurality of thesemiconductor packages according to claim 1 formed on one substratesubstantially longitudinally and laterally in parallel, wherein thesignal extracting aperture, the takeout electrode and the connectingelectrode each of a first semiconductor package of the semiconductorpackages are so configured as to be shared respectively with the signalextracting aperture, the takeout electrode and the connecting electrodeeach of a second semiconductor package adjacent to the firstsemiconductor package.

According to a third aspect of the present invention, there is provideda method of producing a semiconductor package which includes: 1) anelement substrate having a first surface, including: i) a functionalelement formed on the first surface, and ii) an extracting electrodeformed on the first surface and configured to output a signal of thefunctional element, the extracting electrode being disposed around thefunctional element, 2) a rim substrate shaped substantially into aframe, and configured to have a first junction with the elementsubstrate in such a manner as to surround the functional element, and 3)a cover substrate configured to have a second junction with the rimsubstrate in such a manner as to block an aperture of the rim substrate,the method comprising: 1) forming a first through hole through the rimsubstrate; 2) injecting a first conductor material to the first throughhole; 3) forming a second through hole through the cover substrate; and4) injecting a second conductor material to the second through hole.

The other object(s) and feature(s) of the present invention will becomeunderstood from the following description with reference to theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a plan view of an infrared ray sensor, according to a firstembodiment of the present invention, while FIG. 1B is a cross sectionalview taken along the line IB-IB in FIG. 1A.

FIG. 2A is a plan view of a rim substrate, while FIG. 2B is a crosssectional view taken along the line IIB-IIB in FIG. 2A.

FIG. 3 is an enlarged perspective view of the rim substrate having athrough hole.

FIG. 4A is plan view of an element substrate formed with an infrared raysensing element, while FIG. 4B is a cross sectional view taken along theline IVB-IVB in FIG. 4A.

FIG. 5A shows a step for causing the rim substrate to have a firstjunction with the element substrate, while FIG. 5B is a cross sectionalview taken along the line VB-VB in FIG. 5A.

FIG. 6 shows a vacuum device for junction.

FIG. 7A shows a step for injecting a first conductor material to thethrough hole of the rim substrate, while FIG. 7B is a cross sectionalview taken along the line VIIB-VIIB in FIG. 7A.

FIG. 8A shows a step for causing a cover substrate to have a secondjunction with the rim substrate, while FIG. 8B is a cross sectional viewtaken along the line VIIIB-VIIIB in FIG. 8A.

FIG. 9 explains a step for dicing an infrared ray sensor assembly intothe infrared ray sensors.

FIG. 10 shows a semiconductor package having a getter, according to asecond embodiment of the present invention.

FIG. 11 explains a step for dicing an infrared ray sensor assembly intoinfrared ray sensors, according to a third embodiment of the presentinvention.

FIG. 12A is a plan view of the infrared ray sensor according to thethird embodiment, while FIG. 12B is a cross sectional view taken alongthe line XIIB-XIIB in FIG. 12A.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the following, various embodiments of the present invention will bedescribed in detail with reference to the accompanying drawings.

For ease of understanding, the following description will containvarious directional terms, such as left, right, upper, lower, forward,rearward and the like. However, such terms are to be understood withrespect to only a drawing or drawings on which the corresponding part ofelement is illustrated.

First Embodiment

<Structure of Infrared Ray Sensor 1>

An infrared ray sensor 1 (otherwise referred to as “semiconductorpackage 1”) according to a first embodiment of the present invention isto be set forth, referring to FIG. 1A and FIG. 1B. FIG. 1A is a planview of the infrared ray sensor 1, while FIG. 1B is a cross sectionalview taken along the line IB-IB in FIG. 1A.

The infrared ray sensor 1 includes an element substrate 2, a coversubstrate 3 and a rim substrate 4. The semiconductor element substrate 2is made of, for example, Si, and has a first surface 2A formed with aninfrared ray sensing element 5. The infrared ray sensing element 5having a light receiver senses an infrared ray. Specifically, theinfrared ray sensing element 5 senses the light receiver's temperaturewhich is increased when the light receiver is irradiated with theinfrared ray. An extracting electrode 6 for outputting a signal from theinfrared ray sensing element 5 is disposed around the infrared raysensing element 5. The extracting electrode 6 is made of metal such asAl, Cu and the like and has a PAD aperture 6 a (otherwise referred to as“signal extracting aperture 6 a”) for taking out the signal from theinfrared ray sensing element 5. In the extracting electrode 6, a regionother than the PAD aperture 6 a is covered with an insulating film 7.

The cover substrate 3 is made of, for example, ZnS, Ge, Si and the likewhich are capable of transmitting the infrared ray. The rim substrate 4(to be described afterward) having an aperture 4 a has a first junctionwith the semiconductor element substrate 2. Causing the cover substrate3 to have a second junction with the rim substrate 4 in such aconfiguration as to cover the aperture 4 a of the rim substrate 4 formsa space 8 between the infrared ray sensing element 5 and the coversubstrate 3. The thus formed space 8 seals the infrared ray sensingelement 5.

The cover substrate 3 has a second through hole 9. Packing the secondthrough hole 9 with a second conductor material 81 forms a takeoutelectrode 10. Via a wire or a bump, the takeout electrode 10 isconnected to a circuit substrate where the infrared ray sensor 1 isinstalled.

The rim substrate 4 is made of machineable insulative material such asglass, insulative ceramic, silicon and the like, and is shaped into aframe-like plate. The rim substrate 4 is configured to surround theinfrared ray sensing element 5. The rim substrate 4 also has a throughhole, that is, a first through hole 11. Packing the first through hole11 with a first conductor material 71 forms a connecting electrode 12.The connecting electrode 12 connects the PAD aperture 6 a of the elementsubstrate 2 with the takeout electrode 10 of the cover substrate 3.Moreover, the connecting electrode 12 seals the extracting electrode 6and the insulating film 7.

Then, the first through hole 11 formed in the rim substrate 4 is to beset forth in detail, referring to FIG. 2 and FIG. 3. FIG. 2A is a planview of the rim substrate 4, while FIG. 2B is a cross sectional viewtaken along the line IIB-IIB in FIG. 2A. FIG. 3 shows an enlargedperspective view of the first through hole 11. The first through hole 11is not constant in cross section, that is, a first larger through hole11 b on the element substrate 2 side is larger in cross section than afirst smaller through hole 11 a on the cover substrate 3 side. The abovedifference in cross sectional scale is for sealing the extractingelectrode 6 with the first conductor material 71 to be packed in thefirst through hole 11. Sealing the extracting electrode 6 with the firstconductor material 71 is for the following cause: The extractingelectrode 6 or the insulating film 7 causes irregularity to the firstsurface 2A of the element substrate 2, making it difficult to seal withthe first junction (between the rim substrate 4 and the elementsubstrate 2) a portion defining the extracting electrode 6 or theinsulating film 7.

As shown in FIG. 2B and FIG. 3, a first recess 11 c formed in the rimsubstrate 4 causes the first through hole 11 to communicate to an innerface 21 of the rim substrate 4. The above communication is forexhausting an air of the first through hole 11 which air may be causedwhen the first through hole 11 is in the process of being packed withthe first conductor material 71, and for sealing with the firstconductor material 71 an entirety of the extracting electrode 6's regioncovered with the rim substrate 4, in other words, not only a regionadjacent to the PAD aperture 6 a of the extracting electrode 6.

With the air exhausted from the first through hole 11, the first throughhole 11 can be substantially completely packed with the first conductormaterial 71. Moreover, sealing with the first conductor material 71 theentirety of the extracting electrode 6's region covered with the rimsubstrate 4 can prevent impurity gas from remaining in or from occurringto a gap between the rim substrate 4 and the extracting electrode 6.

The recess formed in the rim substrate 4 is not constant in depth.Specifically, a second recess 11 d adjacent to an outlet 21A of theinner face 21 is shallower than the first recess 11 c. The non-constantfirst and second recesses 11 c and 11 d can prevent the first conductormaterial 71 from flowing into the infrared ray sensing element 5 whenthe first through hole 11 is in the process of being packed with thefirst conductor material 71.

<Method of Producing Infrared Ray Sensor 1>

Then, a method of producing the infrared ray sensor 1 is to be setforth, referring to FIG. 4A, FIG. 4B to FIG. 9. As shown in FIG. 4A andFIG. 4B, the infrared ray sensing element 5 is formed on the firstsurface 2A of the element substrate 2, by using a known micro-machiningtechnology. Then, the extracting electrode 6 is formed around theinfrared ray sensing element 5 through an embedding wiring technology.Moreover, the insulating film 7 is formed on a surface of the extractingelectrode 6, to thereby form the PAD aperture 6 a.

Then, as shown in FIG. 5A and FIG. 5B, the rim substrate 4 formed withthe first through hole 11 is caused to have the first junction with theelement substrate 2 formed with the infrared ray sensing element 5. Thefirst through hole 11 is formed through such operations as patterning(using mask), laser, sand blast and the like.

The first junction between the element substrate 2 and the rim substrate4 is to be set forth, referring to FIG. 6. Setting the element substrate2 and the rim substrate 4 in a chamber 61 of a vacuum device 60 canaccomplish the first junction therebetween. The vacuum device 60includes the chamber 61, an upper sample holder 62, a lower sampleholder 63, a beam source 64 and a beam source 65. A vacuum pump (notshown) keeps the chamber 61 in a vacuum state from which the air isexhausted. The upper sample holder 62 is disposed on an upper side ofthe chamber 61, holding the rim substrate 4. The upper sample holder 62is moveable upward and downward, in such a manner as to move the rimsubstrate 4 to a position for causing the rim substrate 4 to have thefirst junction with the element substrate 2. The lower sample holder 63is disposed on a lower side of the chamber 61, holding the elementsubstrate 2. The beam source 64 irradiates Ar ion beam (Ar gas) to therim substrate 4 held by the upper sample holder 62, while the beamsource 65 irradiates Ar ion beam to the element substrate 2 held by thelower sample holder 63.

Irradiating the Ar ion beam (Ar gas) to the rim substrate 4 causes ajunction surface of the rim substrate 4 to be spattered or etched.Therefore, contaminant, moisture and the like covering the surface ofthe rim substrate 4 can be removed, thus activating the junction surfaceof the rim substrate 4. Meanwhile, irradiating the Ar ion beam to ajunction surface (first surface 2A) of the element substrate 2 can alsoremove contaminant, oxidized film, hydroxyl group, moisture and the likewhich cover the surface, thus activating the junction surface of theelement substrate 2.

After the irradiating of the Ar ion beam (Ar gas), the upper sampleholder 62 is moved downward. Then, in the vacuum, overlapping the rimsubstrate 4 with the element substrate 2 with the respective junctionsurfaces thereof in the active state causes the element substrate 2 tohave the first junction with the rim substrate 4 (surface activationjunction).

Then, as shown in FIG. 7A and FIG. 7B, the fused first conductormaterial 71, for example, a solder is injected to the first through hole11 of the rim substrate 4. Then, the above state is left at rest untilthe first conductor material 71 injected to the first through hole 11 issolidified.

Then, as shown in FIG. 8A and FIG. 8B, the cover substrate 3 formed withthe second through hole 9 is caused to have a second junction with therim substrate 4. In the cover substrate 3, the second through hole 9 hasbeen formed in advance by drill, laser, sand blast and the like. Thesecond junction between the cover substrate 3 and the rim substrate 4 isaccomplished by a surface activation junction like the one used foraccomplishing the first junction between the semiconductor elementsubstrate 2 and the rim substrate 4.

After accomplishing the second junction between the cover substrate 3and the rim substrate 4, the fused second conductor material 81, forexample, a solder is injected to the second through hole 9 of the coversubstrate 3. In this case, however, the second conductor material 81injected to the second through hole 9 of the cover substrate 3 is lowerin melting point than the first conductor material 71 injected to thefirst through hole 11 of the rim substrate 4. After the injecting of thesecond conductor material 81 to the second through hole 9, the abovestate is left at rest until the second conductor material 81 issolidified.

In FIG. 2A, FIG. 2B to FIG. 8A, FIG. 8B, the element substrate 2 (onenumber), the cover substrate 3 (one number) and the rim substrate 4 (onenumber) form the infrared ray sensor 1. Actually, however, as shown inFIG. 9, the element substrate 2 (one number), the cover substrate 3 (onenumber) and the rim substrate 4 (one number) form a plurality of theinfrared ray sensors 1 at once (i.e., bracket or batch). Hereinafter, anassembly of the plurality of the infrared ray sensors 1 formed at once(i.e., bracket or batch) is referred to as an infrared ray sensorassembly 90 (otherwise referred to as “semiconductor package assembly90”). The infrared ray sensor assembly 90 has a plurality of theinfrared ray sensors 1 arranged in parallel longitudinally andlaterally. After the left-at-rest state where the second conductormaterial 81 is injected to the second through hole 9, as shown in FIG.9, the infrared ray sensor assembly 90 is diced into pieces along theline G-G′, the line H-H′, the line I-I′ and the line J-J′, to therebyprepare the infrared ray sensor 1 in FIG. 1A and FIG. 1B.

The infrared ray sensor 1 according to the first embodiment brings aboutthe following operations and effects.

(1) The rim substrate 4 formed with the first through hole 11 and theconnecting electrode 12 formed by packing the first through hole 11 withthe first conductor material 71 forms the space 8 between the elementsubstrate 2 (formed with the infrared ray sensing element 5) and thecover substrate 3, thereby sealing the space 8 in the infrared raysensing element 5.

Therefore, other than the region for sealing the infrared ray sensingelement 5, a region for providing an electrode for taking out the signalout of the infrared ray sensing element 5 is not needed on the elementsubstrate 2, thereby making the infrared ray sensor 1 compact.

(2) The second conductor material 81 for packing the second through hole9 of the cover substrate 3 is lower in melting point than the firstconductor material 71 for packing the first through hole 11 of the rimsubstrate 4.

Therefore, when injecting the second conductor material 81 to the secondthrough hole 9 of the cover substrate 3, a possible elution of the firstconductor material 71 from the connecting electrode 12 of the rimsubstrate 4 or a possible re-fusing of the connecting electrode 12 canbe prevented.

(3) The first larger through hole 11 b on the element substrate 2 sideof the rim substrate 4 has the cross section large enough to include theportion (such as the PAD aperture 6 a) formed with the element substrate2's irregularity.

Therefore, the portion (such as the PAD aperture 6 a) formed with theelement substrate 2's irregularity can be sealed with the connectingelectrode 12, thus making it possible to certainly seal a portion whichis difficult to seal depending on the first junction between the elementsubstrate 2 and the rim substrate 4.

(4) The first larger through hole 11 b on the element substrate 2 sideof the rim substrate 4 is larger in cross section than the first smallerthrough hole 11 a on the cover substrate 3 side of the rim substrate 4.

Therefore, even enlarging the cross section of the first larger throughhole 11 b to such an extent that the connecting electrode 12 can sealthe portion formed with the element substrate 2's irregularity canprevent a possible decrease in strength of the rim substrate 4 whichdecrease is attributable to the forming of the first through hole 11.

(5) The second through hole 9 of the cover substrate 3 is larger incross section than the first smaller through hole 11 a on the coversubstrate 3 side of the rim substrate 4.

Therefore, even a slight positional change of the first through hole 11of the rim substrate 4 can accomplish the electric connection betweenthe connecting electrode 12 of the rim substrate 4 and the takeoutelectrode 10 of the cover substrate 3.

(6) On the first junction between the element substrate 2 and the rimsubstrate 4, the rim substrate 4 includes the first and second recesses11 c, 11 d communicating to the inner face 21 of the rim substrate 4.

Therefore, the entirety of each of the extracting electrode 6's regionand the insulating film 7's region which are covered with the rimsubstrate 4 can be sealed with the connecting conductor 12. With this,the space 8 for closing the infrared ray sensing element 5 can becertainly sealed.

Moreover, when the first conductor material 71 is injected to the firstthrough hole 11, the air in the first through hole 11 is exhaustedthrough the first recess 11 c, thus packing the first through hole 11with the first conductor material 71.

(7) The second recess 11 d adjacent to the outlet 21A of the inner face21 is shallower than the first recess 11 c.

Therefore, when injected to the first through hole 11, the firstconductor material 71 can be prevented from flowing to the infrared raysensing element 5.

Moreover, the first conductor material 71 can be packed to adjacent tothe inner face 21, thus certainly accomplishing the sealing with theconnecting conductor 12.

Moreover, the connecting conductor 12 eliminates a gap between the rimsubstrate 4 and the insulating film 7, thereby decreasing quantity of animpurity gas adsorbed to a getter which may be provided in the space 8.

(8) Unlike a bump and the like pushed for junction, the rim substrate 4shaped into a frame-like plate can keep in uniform a gap between theelement substrate 2 and the cover substrate 3.

The infrared ray sensor 1 according to the first embodiment can bemodified as set fort in the following paragraphs (1) to (6), includingthe paragraph (2) according to a second embodiment and the paragraph (6)according to a third embodiment:

(1) The functional element formed on the element substrate 2 is theinfrared ray sensing element 5, but not limited thereto. Any otherfunctional element formed on the element substrate 2 is allowed. Forexample, a pressure sensor element, an acceleration sensing element, agyro element, and a CCD (Charge Coupled Device) are allowed. With theseother functional elements, the element substrate 2 does not need totransmit the infrared ray, and therefore does not need to have infraredtransmissivity.

Second Embodiment

(2) As shown in FIG. 10, a getter 102 for adsorbing the impurity gas maybe provided in the space 8 defined by a functional element 101 of asemiconductor package 100. When the space 8 is closed to a vacuum state,the getter 102 can help keep a high vacuum level.(3) For bettering the second through hole 9's wettability with thesecond conductor material 81, a surface of the second through hole 9 maybe plated before the injecting of the second conductor material 81. Thethus bettered second through hole 9's wettability with the secondconductor material 81 can increase adhesion between the second conductormaterial 81 and the second through hole 9, thereby increasing packingproperty of the second conductor material 81. Moreover, likewise, asurface of the first through hole 11 of the rim substrate 4 may beplated.(4) Other than the metal wiring, the extracting electrode 6 may be madethrough a poly Si wiring or a diffusion layer wiring.(5) The first junction between the element substrate 2 and the rimsubstrate 4 and the second junction between the cover substrate 3 andthe rim substrate 4 are accomplished by the surface activation junction.Otherwise, the above first and second junctions each may be accomplishedby a positive electrode junction and the like.

Moreover, depending on the functional element, the first and secondjunctions each may be accomplished in an atmosphere rather than in thevacuum.

Third Embodiment

(6) As shown in FIG. 11, adjacent infrared ray sensors of an infraredray sensor assembly 90A (otherwise referred to as “semiconductor packageassembly 90A”) are so configured as to share the takeout electrode 10,the connecting electrode 12 (not shown) and the PAD aperture 6 a (notshown). With the above structure, parts corresponding to the takeoutelectrode 10, the connecting electrode 12 (not shown) and the PADaperture 6 a (not shown) are diced into pieces along the line K-K′, lineL-L′, the line M-M′ and line N-N′, to thereby obtain an infrared raysensor 1A (otherwise referred to as “semiconductor package 1A”) in FIG.12A and FIG. 12B.

Cutting the parts corresponding to the takeout electrode 10, theconnecting electrode 12 (not shown), the PAD aperture 6 a (not shown)leaves the first and second conductor materials 71, 81 packedrespectively in the through holes 9, 11, thus keeping the space 8closed. The above structure and operation according to the thirdembodiment can make the infrared ray sensor 1A smaller than the infraredray sensor 1 according to the first embodiment.

Having the structural features described above, the present invention isnot limited to any of the embodiments or modifications thereof describedabove.

This application is based on a prior Japanese Patent Application No.P2006-154920 (filed on Jun. 2, 2006 in Japan). The entire contents ofthe Japanese Patent Application No. P2006-154920 from which priority isclaimed are incorporated herein by reference, in order to take someprotection against translation errors or omitted portions.

The scope of the present invention is defined with reference to thefollowing claims.

1. A semiconductor package, comprising: 1) an element substrate having afirst surface, including: i) a functional element formed on the firstsurface, and ii) an extracting electrode formed on the first surface andconfigured to output a signal of the functional element, the extractingelectrode being disposed around the functional element; 2) a rimsubstrate shaped substantially into a frame, and configured to have afirst junction with the element substrate in such a manner as tosurround the functional element, the rim substrate including: i) a firstthrough hole through the rim substrate, and ii) a connecting electrodewhich is: formed by packing the first through hole with a firstconductor material, configured to seal a signal extracting aperture ofthe extracting electrode, and configured to electrically connect thesignal extracting aperture with a takeout electrode; and 3) a coversubstrate configured to have a second junction with the rim substrate insuch a manner as to block an aperture of the rim substrate, the coversubstrate including: i) a second through hole through the coversubstrate, and ii) the takeout electrode which is: formed by packing thesecond through hole with a second conductor material, and configured totake out the signal of the functional element.
 2. The semiconductorpackage according to claim 1, wherein the second conductor material forpacking the second through hole is lower in melting point than the firstconductor material for packing the first through hole.
 3. Thesemiconductor package according to claim 1, wherein the first throughhole has a cross section on the element substrate side larger than across section on the cover substrate side.
 4. The semiconductor packageaccording to claim 1, wherein the second through hole has a crosssection larger than a cross section of the first through hole on thecover substrate side.
 5. The semiconductor package according to claim 1,wherein the rim substrate includes a recess communicating to an innerface of the rim substrate along the extracting electrode on the firstjunction between the element substrate and the rim substrate, and therecess is packed with the first conductor material.
 6. The semiconductorpackage according to claim 5, wherein the recess includes: 1) a firstrecess, and 2) a second recess shallower than the first recess andconnected to the first recess in such a configuration as to be adjacentto the inner face.
 7. The semiconductor package according to claim 1,wherein the functional element is an infrared ray sensing element. 8.The semiconductor package according to claim 1, wherein the functionalelement is selected from the group consisting of a pressure sensorelement, an acceleration sensing element, a gyro element, and a chargecoupled device.
 9. The semiconductor package according to claim 1,further comprising: a getter for absorbing an impurity gas, the getterbeing provided in a space defined by the functional element, wherein thegetter is so configured as to keep a high vacuum level when the space isclosed to a vacuum state.
 10. The semiconductor package according toclaim 1, wherein a surface of the first through hole is plated beforethe first conductor material is injected to the first through hole, anda surface of the second through hole is plated before the secondconductor material is injected to the second through hole.
 11. Thesemiconductor package according to claim 1, wherein the extractingelectrode is made through the group consisting of a metal wiring, a polySi wiring and a diffusion layer wiring.
 12. The semiconductor packageaccording to claim 1, wherein the first junction and the second junctioneach are configured to be accomplished by any of a surface activationjunction and a positive electrode junction, and the first junction andthe second junction each are configured to be accomplished in any of avacuum and an atmosphere.
 13. A semiconductor package assembly,comprising: 1) a plurality of the semiconductor packages according toclaim 1 formed on one substrate substantially longitudinally andlaterally in parallel, wherein the signal extracting aperture, thetakeout electrode and the connecting electrode each of a firstsemiconductor package of the semiconductor packages are so configured asto be shared respectively with the signal extracting aperture, thetakeout electrode and the connecting electrode each of a secondsemiconductor package adjacent to the first semiconductor package. 14.The semiconductor package assembly according to claim 13, wherein thesemiconductor package assembly is configured to be diced into aplurality of the semiconductor packages.
 15. The semiconductor packageassembly according to claim 14, wherein the functional element is aninfrared ray sensing element.
 16. The semiconductor package assemblyaccording to claim 13, wherein the functional element is selected fromthe group consisting of a pressure sensor element, an accelerationsensing element, a gyro element, and a charge coupled device.
 17. Amethod of producing a semiconductor package which includes: 1) anelement substrate having a first surface, including: i) a functionalelement formed on the first surface, and ii) an extracting electrodeformed on the first surface and configured to output a signal of thefunctional element, the extracting electrode being disposed around thefunctional element, 2) a rim substrate shaped substantially into aframe, and configured to have a first junction with the elementsubstrate in such a manner as to surround the functional element, and 3)a cover substrate configured to have a second junction with the rimsubstrate in such a manner as to block an aperture of the rim substrate,the method comprising: 1) forming a first through hole through the rimsubstrate; 2) injecting a first conductor material to the first throughhole; 3) forming a second through hole through the cover substrate; and4) injecting a second conductor material to the second through hole. 18.The method of producing the semiconductor package according to claim 17,wherein the rim substrate formed with the first through hole is causedto have the first junction with the element substrate, followed by theinjecting of the first conductor material to the first through hole, andthen, the cover substrate formed with the second through hole is causedto have the second junction with the rim substrate, followed by theinjecting of the second conductor material to the second through hole.19. The method of producing the semiconductor package according to claim17, further comprising: 1) forming a recess communicating to an innerface of the rim substrate along the extracting electrode on the junctionface between the element substrate and the rim substrate, and 2) packingthe recess with the first conductor material.
 20. The method ofproducing the semiconductor package according to claim 17, furthercomprising: 1) preparing a semiconductor package assembly whichincludes: a plurality of the semiconductor packages on one substratesubstantially longitudinally and laterally in parallel, wherein a signalextracting aperture, a takeout electrode and a connecting electrode eachof a first semiconductor package of the semiconductor packages areshared respectively with a signal extracting aperture, a takeoutelectrode and a connecting electrode each of a second semiconductorpackage adjacent to the first semiconductor package, and 2) dicing thesemiconductor package assembly into the plurality of the semiconductorpackages.